SUU50N03-10P vishay siliconix document number: 71296 s-01706?rev. a, 14-aug-00 www.vishay.com 1 n-channel 30-v (d-s), 175 _ c, mosfet pwm optimized product summary v (br)dss (v) r ds(on) ( ? ) i d (a) a 3 0 0.010 @ v gs =10v 20 3 0 0.014 @ v gs =4.5v 18 d g s n-channel mosfet order number: SUU50N03-10P to-251 s gd top view and drain-tab absolute maximum ratings (t a =25 _ c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs ? 20 v c o n t i n u o u s d r a i n c u r r e n t ( t j = 1 7 5 _ c ) a t a =25 _ c i d 20 continuous drain current (t j = 175 _ c) a t a = 100 _ c i d 14 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 20 m a x i m u m p o w e r d i s s i p a t i o n t c =25 _ c p d 71 b w maximum power dissipation t a =25 _ c p d 8.3 a w operating junction and storage temperature range t j ,t stg --55 to 175 _ c thermal resistance ratings parameter symbol typical maximum unit m i j t i t a b i t a t 10 sec r 15 18 maximum junction-to-ambient a steady state r thja 40 50 _ c/w maximum junction-to-case steady state r thjc 1.75 2.1 notes: a. surface mounted on 1? x 1? fr4 board, t 10 sec. b. see soa curve for voltage derating. www..net
SUU50N03-10P vishay siliconix www.vishay.com 2 document number: 71296 s-01706?rev. a, 14-aug-00 mosfet specifications (t j =25 _ c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d = 250 m a 30 v gate threshold voltage v gs(th) v ds =v gs ,i ds = 250 m a 1 2 v gate-body leakage i gss v ds =0v,v gs = ? 20 v ? 100 na v ds =30v,v gs =0v 1 zero gate voltage drain current i dss v ds =30v,v gs =0v,t j = 125 _ c 50 m g d s s v ds =30v,v gs =0v,t j = 175 _ c 150 m on-state drain current a i d(on) v ds =5v,v gs =10 v 50 a v gs =10v,i d =15a 0.0075 0.010 d r a i n s o u r c e o n s t a t e r e s i s t a n c e a r d s ( ) v gs =10v,i d =15a,t j = 125 _ c 0.016 ? _ c 0.019 ? v gs =4.5v,i d =15a 0.011 0.014 forward transconductance a g fs v ds =15v,i d =15a 20 s dynamic b input capacitance c iss 2710 6000 output capacitance c oss v gs =0v,v ds =25v,f=1mhz 500 pf reversen transfer capacitance c rss 250 total gate charge c q g 55 100 gate-source charge c q gs v ds =15v,v gs =10 v,i d =20a 10 nc gate-drain charge c q gd d s , g s , d 9 turn-on delay time c t d(on) 16 30 rise time c t r v dd =15v,r l =0.3 ? 90 135 n s turn-off delay time c t d(off) v d d 1 5 v , r l 0 . 3 ? ? 20 a, v gen =10v,r g =2.5 ? 33 60 ns fall time c t f g 20 40 source-drain diode ratings and characteristics (t c =25 _ c) b continuous current i s 20 a pulsed current i sm 100 a forward voltage a v sd i f = 100 a, v gs =0v 1.2 1.5 v reverse recovery time t rr i f = 20 a, di/dt = 100 a/ m s 55 100 ns notes: a. pulse test; pulse width 300 m s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. www..net
SUU50N03-10P vishay siliconix document number: 71296 s-01706?rev. a, 14-aug-00 www.vishay.com 3 typical characteristics (25 _ c unless noted) 0 2 4 6 8 10 0 1020304050 0 20 40 60 80 100 0 1020304050 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 40 80 120 160 200 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds -- drain-to-source voltage (v) v gs -- gate-to-source voltage (v) -- drain current (a) i d -- gate-to-source voltage (v) q g -- total gate charge (nc) i d -- drain current (a) v ds -- drain-to-source voltage (v) c -- capacitance (pf) v gs -- transconductance (s) g fs 25 _ c -- 5 5 _ c 3v t c = 125 _ c v ds =15v i d =50a v gs =10thru6v 5v v gs =10v c rss t c =--55 _ c 25 _ c 125 _ c 4v v gs =4.5v -- on-resistance ( r ds(on) ? ) -- drain current (a) i d i d -- drain current (a) 0 1000 2000 3000 4000 5000 0 6 12 18 24 30 c iss c oss www..net
SUU50N03-10P vishay siliconix www.vishay.com 4 document number: 71296 s-01706?rev. a, 14-aug-00 typical characteristics (25 _ c unless noted) 0.0 0.4 0.8 1.2 1.6 2.0 --50 --25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j -- junction temperature ( _ c) v sd -- source-to-drain voltage (v) -- source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs =10v i d =50a t j =25 _ c t j = 150 _ c (normalized) -- on-resistance ( r ds(on) ? ) 0 thermal ratings 0 5 10 15 20 25 0 25 50 75 100 125 150 175 safe operating area v ds -- drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.01 100 maximum avalanche drain current vs. ambient temperature t a -- case temperature ( _ c) -- drain current (a) i d 1ms 10 m s 100 m s -- drain current (a) i d 1 0.1 limited by r ds(on) t a =25 _ c single pulse 10 ms 100 ms dc 1s 10 s 100 s 2 1 0.1 0.01 10 -- 4 10 -- 3 10 -- 2 10 -- 1 1 10 600 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja =40 _ c/w 3. t jm -- t a =p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 100 www..net
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